CREE C2M0080120D

Revision as of 16:01, 22 November 2016

Download

Identification tool

The parameter extraction has been done by means of a Matlab-PSpice parameter identification tool for SiC MOSFETs called MOSPEX which you can find here. It is a user-friendly Graphic User Interface (GUI) that you can use on your own.

Tests performed

Static

Fig. 1 reports the comparison between the experimental DC Transfer curves and the simulated static output characteristics at different junction temperature values. It can be observed as the current capabilty of the MOSFET increases for higher temperatures when the gate voltage is low (NTC: negative temperature coefficient), while it decreases when Vgs is high (PTC: positive temperature coefficient). Fig. 2 reports the comparison between the experimental DC Output curves and the simulated static characteristics at different junction temperature values.

Fig. 1. DC Transfer Characteristics.

Fig. 2. DC Output Characteristics.

Dynamic

Fig. 2 (a) shows the comparison between measured and simulated turn-off waveforms at the following testing conditions: IC=560 A, VDC=900V and T=25C. The comparison between the PSpice simulation and experimental results validating the temperature-dependent IGBT model under inductive switching conditions are shown in Figs. 2(b) and 2(c) at 75ºC and 125ºC, respectively. Fig. 2 (d) shows the comparison between the experimental curves at different current and voltage levels (IC=670 A, VDC=1100V).

Fig. 2. Dynamic response.

@@ Line 8: / Line 8: @@
 === Static ===
-Fig. 1 reports the comparison between the datasheet information and the simulated static output characteristics. More precisely, Fig. 1 (a) shows the IGBT output characteristics at 150ºC for the following gate voltages: VGE=8V, 10V, 12V and 15V. Fig. 1 (b) displays the simulated static output characteristics as a function of temperature (i.e., T= 25ºC and T=150ºC) for a given gate voltage (VGE =15V).
+Fig. 1 reports the comparison between the experimental DC Transfer curves and the simulated static output characteristics at different junction temperature values. It can be observed as the current capabilty of the MOSFET increases for higher temperatures when the gate voltage is low (NTC: negative temperature coefficient), while it decreases when Vgs is high (PTC: positive temperature coefficient). Fig. 2 reports the comparison between the experimental DC Output curves and the simulated static characteristics at different junction temperature values.
 {| style="margin: 0 auto;"
@@ Line 28: / Line 28: @@
 | [[File:IGBT FF1000R17IE4 dynamic.PNG|link=|thumb|600px|Fig. 2. Dynamic response.]]
 |-
-|}
 |}