CREE C2M0080120D

Revision as of 15:58, 22 November 2016

Download

Identification tool

The parameter extraction has been done by means of a Matlab-PSpice parameter identification tool for SiC MOSFETs called MOSPEX which you can find here. It is a user-friendly Graphic User Interface (GUI) that you can use on your own.

Tests performed

Static

Fig. 1 reports the comparison between the datasheet information and the simulated static output characteristics. More precisely, Fig. 1 (a) shows the IGBT output characteristics at 150ºC for the following gate voltages: VGE=8V, 10V, 12V and 15V. Fig. 1 (b) displays the simulated static output characteristics as a function of temperature (i.e., T= 25ºC and T=150ºC) for a given gate voltage (VGE =15V).

Fig. 1. DC Transfer Characteristics.

Fig. 2. DC Output Characteristics.

Dynamic

Fig. 2 (a) shows the comparison between measured and simulated turn-off waveforms at the following testing conditions: IC=560 A, VDC=900V and T=25C. The comparison between the PSpice simulation and experimental results validating the temperature-dependent IGBT model under inductive switching conditions are shown in Figs. 2(b) and 2(c) at 75ºC and 125ºC, respectively. Fig. 2 (d) shows the comparison between the experimental curves at different current and voltage levels (IC=670 A, VDC=1100V).

Fig. 2. Dynamic response.

|}

@@ Line 12: / Line 12: @@
 {| style="margin: 0 auto;"
 |-
-| [[File:IGBT FF1000R17IE4 static.PNG|link=|thumb|600px|Fig. 1. Static response.]]
+| [[File:C2M0080120D ID VGS.png|link=|thumb|400px|Fig. 1. DC Transfer Characteristics.]]
+|-
+|}
+{| style="margin: 0 auto;"
+|-
+| [[File:C2M0080120D ID VDS.png|link=|thumb|400px|Fig. 2. DC Output Characteristics.]]
 |-
 |}