View source for CREE C2M0080120D

=== Static ===

Fig. 1 reports the comparison between the experimental DC Transfer curves and the simulated static output characteristics at different junction temperature values. It can be observed as the current capabilty of the MOSFET increases for higher temperatures when the gate voltage is low (NTC: negative temperature coefficient), while it decreases when Vgs is high (PTC: positive temperature coefficient). 

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| [[File:C2M0080120D ID VGS.png|link=|thumb|400px|Fig. 1. DC Transfer Characteristics validation.]]
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Fig. 2 reports the comparison between the experimental DC Output curves and the simulated static characteristics at different junction temperature values. 
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| [[File:C2M0080120D ID VDS.png|link=|thumb|400px|Fig. 2. DC Transfer Characteristics validation.]]
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Fig. 4 reports the comparison between the experimental capacitance measurements for a drain bias sweep (Vgs=0) and the simulated curves.
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| [[File:C2M0080120D cap.png|link=|thumb|400px|Fig. 3. Capacitance measurements validation.]]
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Fig. 4 reports the comparison between the measured conduction power losses and the simulated ones for increasing drain current and different junction temperatures.
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| [[File:C2M0080120D condloss.png|link=|thumb|400px|Fig. 4. Conduction power losses validation.]]
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