View source for CREE C2M0080120D

== Download ==
{{#dlmodel: C2M0080120D | http://www.igbtmodel.org/images/e/e6/C2M0080120D.zip }}

== Identification tool ==
The parameter extraction has been done by means of a Matlab-PSpice parameter identification tool for SiC MOSFETs called MOSPEX which you can find [[MOSPEX|here]]. It is a user-friendly Graphic User Interface (GUI) that you can use on your own.
== Tests performed ==

=== Static ===

Fig. 1 reports the comparison between the datasheet information and the simulated static output characteristics. More precisely, Fig. 1 (a) shows the IGBT output characteristics at 150ºC for the following gate voltages: VGE=8V, 10V, 12V and 15V. Fig. 1 (b) displays the simulated static output characteristics as a function of temperature (i.e., T= 25ºC and T=150ºC) for a given gate voltage (VGE =15V).

{| style="margin: 0 auto;"
|-
| [[File:IGBT FF1000R17IE4 static.PNG|link=|thumb|600px|Fig. 1. Static response.]]
|-
|}
=== Dynamic ===

Fig. 2 (a) shows the comparison between measured and simulated turn-off waveforms at the following testing conditions: IC=560 A, VDC=900V and T=25C. The comparison between the PSpice simulation and experimental results validating the temperature-dependent IGBT model under inductive switching conditions are shown in Figs. 2(b) and 2(c) at 75ºC and 125ºC, respectively. Fig. 2 (d) shows the comparison between the experimental curves at different current and voltage levels (IC=670 A, VDC=1100V).

{| style="margin: 0 auto;"
|-
| [[File:IGBT FF1000R17IE4 dynamic.PNG|link=|thumb|600px|Fig. 2. Dynamic response.]]
|-
|}

|}